http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente sst2630 3.8a , 100v , r ds(on) 130 m ? n-ch enhancement mode power mosfet 11-jul-2014 rev. a page 1 of 2 b l f h c j d g k a e 2 6 3 0 = date code rohs compliant product a suffix of -c specifies halogen and lead-free description the sst2630 provide the designer with best combinat ion of fast switching, low on-resistance and cost-e ffectiveness. the sot-26 package is universally used for al l commercial- industrial surface mount applications. features low on-resistance capable of 2.5v gate drive low drive current marking package information package mpq leader size sot-26 3k 7 inch absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v t a =25c 3.8 continuous drain current, v gs =4.5v 3 t a =70c i d 3 a pulsed drain current 1 i dm 14 a power dissipation t a =25c p d 2 w linear derating factor 0.016 w / c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 3 r ja 62.5 c / w sot-26 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.30 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 d g d d d s
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente sst2630 3.8a , 100v , r ds(on) 130 m ? n-ch enhancement mode power mosfet 11-jul-2014 rev. a page 2 of 2 electrical characteristics ( t j =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =250ua breakdown voltage temperature coefficient bv ds / t j - 0.067 - v/c reference to 25c, i d =1ma gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250ua gate-body leakage current i gss - - 1 ua v gs =80v t j =25 c - - 10 v ds =60v, v gs =0 drain-source leakage current t j =75 c i dss - - 25 ua v ds =48v, v gs =0 drain-source on-resistance 2 r ds(on) - - 130 m v gs =10v, i d =8a forward transconductance g fs - 5 - s v ds =20v, i d =3a dynamic total gate charge 2 q g - 8 - gate-source charge q gs - 1.5 - gate-drain (miller)charge q gd - 2.2 - nc v ds =80v, v gs =10v, i d =10a turn-on delay time 2 t d(on) - 8 - rise time t r - 7 - turn-off delay time t d(off) - 20 - fall time t f - 15 - ns v ds =50v, v gs =10v, r g =3.3 , r d =5 , i d =10a input capacitance c iss - 518 - output capacitance c oss - 50 - reverse transfer capacitance c rss - 40 - pf v gs =0v v ds =15v, f=1.0mhz source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =8a, v gs =0v notes: 1. pulse width limited by max. junction temperatur e. 2. pulse width 300us, duty Q cycle 2% Q 3. surface mounted on 1 in 2 copper pad of fr4 board; 156c/w when mounted on m in. copper pad.
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